(China (Mainland))
Product Summary
The JANTXV2N6790 HEXFET transistor features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. It is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parametrics
Absolute maximum ratings: (1)ID @ VGS = 10V, TC = 25℃, Continuous Drain Current: 3.5 A; (2)ID @ VGS = 10V, TC = 100℃, Continuous Drain Current: 2.25 A; (3)IDM, Pulsed Drain Current: 14A; (4)PD @ TC = 25℃, Max. Power Dissipation: 20 W; (5)Linear Derating Factor: 0.16 W/℃; (6)VGS, Gate-to-Source Voltage: ±20 V; (7)EAS, Single Pulse Avalanche Energy: 66 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (9)TJ, Operating Junction: -55 to 150℃; (10)Lead Temperature: 300 ℃(0.063 in. (1.6mm) from case for 10s); Weight: 0.98(typical) g.
Features
Features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.
Diagrams
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JANTXV2N6790 |
Other |
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JANTXV2N6792 |
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JANTXV2N6794 |
Other |
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Negotiable |
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JANTXV2N5683 |
Other |
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Negotiable |
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JANTXV2N5671 |
Other |
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Negotiable |
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JANTXV2N5660 |
Other |
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Negotiable |
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